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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 12, 页码: 123504
Lv YJ; Lin ZJ; Meng LG; Yu YX; Luan CB; Cao ZF; Chen H; Sun BQ; Wang ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Characteristics of heat generation in a quantum dot 期刊论文
physical review b, 2011, 卷号: 83, 期号: 19, 页码: article no.195303
Zhou LL; Li SS; Wei JN; Wang SQ
收藏  |  浏览/下载：61/5  |  提交时间：2011/07/05
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming)
收藏  |  浏览/下载：101/3  |  提交时间：2010/05/24
Interference in transport through double barriers in interacting quantum wires 期刊论文
physical review b, 2010, 卷号: 81, 期号: 5, 页码: art. no. 155438
Wang SQ (Wang Shaoqin); Zhou LL (Zhou Liling); Zeng ZY (Zeng Zhao Yang)
收藏  |  浏览/下载：34/1  |  提交时间：2010/05/24
Resonant tunneling through S- and U-shaped graphene nanoribbons 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 41, 页码: art. no. 415203
作者:  Wu ZH
收藏  |  浏览/下载：55/2  |  提交时间：2010/03/08
Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 4, 页码: art. no. 042901
Wu GG; Li HR; Liang K; Yang R; Cao XL; Wang HY; An JM; Hu XW; Han DJ
收藏  |  浏览/下载：76/31  |  提交时间：2010/03/08
High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature 期刊论文
electronics letters, 2009, 卷号: 45, 期号: 6, 页码: 329-330
作者:  Zhu H;  Liu J
收藏  |  浏览/下载：252/78  |  提交时间：2010/03/08
Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 719-721
Cao JS; Guan M; Cao GH; Zeng YP; Li JM; Qin DS
收藏  |  浏览/下载：91/4  |  提交时间：2010/03/08
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08
The influence of Schottky contact metals on the strain of AlGaN barrier layers 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 4, 页码: art. no. 044503
Lin, ZJ; Zhao, JZ; Corrigan, TD; Wang, Z; You, ZD; Wang, ZG; Lu, W
收藏  |  浏览/下载：51/2  |  提交时间：2010/03/08

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