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科研机构
半导体研究所 [20]
内容类型
期刊论文 [16]
会议论文 [4]
发表日期
2011 [1]
2009 [1]
2008 [1]
2005 [2]
2002 [2]
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半导体物理 [20]
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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
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  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
A lattice dynamical treatment for the total potential energy of single-walled carbon nanotubes and its applications: relaxed equilibrium structure, elastic properties, and vibrational modes of ultra-narrow tubes
期刊论文
journal of physics-condensed matter, 2008, 卷号: 20, 期号: 4, 页码: art. no. 045228
Jiang, JW
;
Tang, H
;
Wang, BS
;
Su, ZB
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  |  
浏览/下载:114/3
  |  
提交时间:2010/03/08
NANOSCALE GRAPHITIC TUBULES
YOUNGS MODULUS
MECHANICAL-PROPERTIES
CHANNELS
RAMAN
CRYSTALS
STRAIN
1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer
期刊论文
journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327
Fang ZD
;
Gong Z
;
Miao ZH
;
Niu ZC
;
Shen GD
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  |  
浏览/下载:148/11
  |  
提交时间:2010/03/17
InAs/GaAs quantum dots
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y
;
Zhu XP
;
Gan QQ
;
Song GF
;
Cao Q
;
Guo, L
;
Li YZ
;
Chen LH
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  |  
浏览/下载:575/277
  |  
提交时间:2010/03/29
valence band mixing
ECR plasma in growth of cubic GaN by low pressure MOCVD
期刊论文
plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
Gu B
;
Xu Y
;
Qin FW
;
Wang SS
;
Sui Y
;
Wang ZG
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  |  
浏览/下载:78/7
  |  
提交时间:2010/08/12
ECR plasma
cubic GaN
low pressure MOCVD
MOLECULAR-BEAM EPITAXY
CYCLOTRON-RESONANCE PLASMA
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
GALLIUM NITRIDE
GAAS
DIMETHYLHYDRAZINE
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF
;
Cao YG
;
Xie MH
;
Wang XL
;
Tong SY
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  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
MISFIT DISLOCATIONS
DEFECTS
INGAN
GAN
REDUCTION
INDIUM
LAYERS
FILMS
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
期刊论文
journal of vacuum science & technology b, 2000, 卷号: 18, 期号: 4, 页码: 2271-2273
Yang Z
;
Sou IK
;
Chen YH
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  |  
浏览/下载:54/0
  |  
提交时间:2010/08/12
REFLECTANCE DIFFERENCE SPECTROSCOPY
ZNSE/GAAS INTERFACE
STATES
GAAS
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
会议论文
27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27), salt lake city, utah, jan 16-20, 2000
Yang Z
;
Sou IK
;
Chen YH
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  |  
浏览/下载:7/0
  |  
提交时间:2010/11/15
REFLECTANCE DIFFERENCE SPECTROSCOPY
ZNSE/GAAS INTERFACE
STATES
GAAS
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