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科研机构
半导体研究所 [18]
内容类型
期刊论文 [18]
发表日期
2009 [13]
2008 [3]
2006 [1]
1999 [1]
学科主题
半导体物理 [18]
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109
Yu HL
;
Zhang XM
;
Wang PF
;
Ni HQ
;
Niu ZC
;
Lai TS
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  |  
浏览/下载:53/4
  |  
提交时间:2010/03/08
circular dichroism
diffraction gratings
diffusion
gallium arsenide
homodyne detection
III-V semiconductors
spin dynamics
spin polarised transport
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:
Zhu JJ
;
Zhang SM
;
Jiang DS
;
Zhao DG
;
Yang H
收藏
  |  
浏览/下载:191/56
  |  
提交时间:2010/03/08
aluminium compounds
claddings
gallium compounds
III-V semiconductors
indium compounds
quantum well lasers
refractive index
waveguide lasers
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:235/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Electron spin quantum beats and room temperature g factor in GaAsN
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041911
Zhao HM
;
Lombez L
;
Liu BL
;
Sun BQ
;
Xue QK
;
Chen DM
;
Marie X
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2010/03/08
electron spin polarisation
gallium arsenide
g-factor
high-speed optical techniques
III-V semiconductors
semiconductor thin films
Zeeman effect
Fine structural splitting and exciton spin relaxation in single InAs quantum dots
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516
Dou XM
;
Sun BQ
;
Xiong YH
;
Niu ZC
;
Ni HQ
;
Xu ZY
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/03/08
deformation
excitons
fine structure
III-V semiconductors
indium compounds
phonons
photoluminescence
semiconductor quantum dots
spin dynamics
Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 053107
作者:
Tan PH
;
Liu J
收藏
  |  
浏览/下载:61/1
  |  
提交时间:2010/03/08
colloidal crystals
II-VI semiconductors
infrared spectra
mercury compounds
nanostructured materials
photoluminescence
photonic crystals
semiconductor quantum dots
silicon-on-insulator
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:80/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
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