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科研机构
半导体研究所 [21]
内容类型
期刊论文 [20]
会议论文 [1]
发表日期
2011 [3]
2010 [2]
2009 [2]
2008 [5]
2006 [4]
2003 [1]
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半导体物理 [21]
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Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:
Tan PH
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浏览/下载:52/5
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提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
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浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment
期刊论文
ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
Lu XF
;
Balocco C
;
Yang FH
;
Song AM
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浏览/下载:71/7
  |  
提交时间:2011/07/05
Atomic-force microscope (AFM)
nanolithography
self-switching diodes (SSDs)
2-D electron gas
CONDUCTING POLYMER-FILMS
NANOMETER-SCALE
LITHOGRAPHY
FABRICATION
SURFACES
DEVICES
NANOSTRUCTURES
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
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浏览/下载:29/0
  |  
提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076401
Wang TT (Wang Ting-Ting)
;
Li WL (Li Wen-Long)
;
Chen ZH (Chen Zhang-Hui)
;
Miao L (Miao Ling)
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  |  
浏览/下载:94/1
  |  
提交时间:2010/08/17
density functional theory
neural network
genetic algorithm
alternate combination
LINEAR-REGRESSION CORRECTION
TRAINING SET
ELECTRON-GAS
PREDICTION
APPROXIMATION
DESCRIPTORS
ACCURATE
ENERGY
HEAT
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study
期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:
Li JB
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  |  
浏览/下载:165/21
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
SILICON-CARBIDE NANOTUBES
FORMATION ENERGIES
CARBON NANOTUBES
BORON-NITRIDE
NANOWIRES
COMPOSITES
DEFECTS
FUSION
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:80/7
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提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236
Shang, LY
;
Lin, T
;
Zhou, WZ
;
Li, DL
;
Gao, HL
;
Zeng, YP
;
Guo, SL
;
Yu, GL
;
Chu, JH
收藏
  |  
浏览/下载:86/0
  |  
提交时间:2010/03/08
two-dimensional electron gas
positive magnetoresistance
intersubband scattering
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073712
作者:
Wang Y
;
Zhang XW
;
Yin ZG
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  |  
浏览/下载:44/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
Dislocation scattering in AlxGa1-xN/GaN heterostructures
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ
;
Liu, XL
;
Han, XX
;
Yuan, HR
;
Wang, J
;
Guo, Y
;
Song, HP
;
Zheng, GL
;
Wei, HY
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
aluminium compounds
dislocation density
electron mobility
gallium compounds
III-V semiconductors
interface roughness
semiconductor heterojunctions
two-dimensional electron gas
wide band gap semiconductors
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