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科研机构
半导体研究所 [11]
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期刊论文 [10]
会议论文 [1]
发表日期
2011 [1]
2010 [1]
2006 [1]
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1996 [4]
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半导体物理 [11]
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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL
;
Xia, JB
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  |  
浏览/下载:77/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Application of Raman spectroscopy in carbon nanotube-based polymer composites
期刊论文
chinese science bulletin, 2010, 卷号: 55, 期号: 35, 页码: 3978-3988
作者:
Tan PH
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  |  
浏览/下载:101/2
  |  
提交时间:2011/07/05
Raman spectroscopy
carbon nanotube
composites
CNT macroarchitecture
RADIAL BREATHING MODE
DIAMETER DISTRIBUTION
WALL
SCATTERING
FIBERS
SENSORS
STRESS
FUNCTIONALIZATION
NANOCOMPOSITES
OXIDATION
Design of shallow acceptors in ZnO: First-principles band-structure calculations
期刊论文
physical review b, 2006, 卷号: 74, 期号: 8, 页码: art.no.081201
Li J (Li Jingbo)
;
Wei SH (Wei Su-Huai)
;
Li SS (Li Shu-Shen)
;
Xia JB (Xia Jian-Bai)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
P-TYPE ZNO
TOTAL-ENERGY CALCULATIONS
WAVE BASIS-SET
II-VI
ROOM-TEMPERATURE
THIN-FILMS
SEMICONDUCTORS
FABRICATION
DEFECTS
DEVICES
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers
期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:
Xu YQ
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  |  
浏览/下载:395/1
  |  
提交时间:2010/08/12
band structure
differential gain
GaInNAs
optical gain
strain compensated
strain mediated
STRAIN
TEMPERATURE
DIODES
ALLOYS
OFFSET
New method for the growth of highly uniform quantum dots
会议论文
2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997
Pan D
;
Zeng YP
;
Kong MY
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  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
self-formed quantum dot
Stranski-Krastanow growth mode
superlattice
MOLECULAR-BEAM EPITAXY
INGAAS
GAAS
DISLOCATIONS
MULTILAYERS
DEFECTS
STRAIN
Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs
期刊论文
physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335
Li GH
;
Goni AR
;
Syassen K
;
Hou HQ
;
Feng W
;
Zhou JM
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  |  
浏览/下载:43/0
  |  
提交时间:2010/11/17
MULTIPLE QUANTUM-WELLS
HYDROSTATIC-PRESSURE
DEFORMATION POTENTIALS
EXCITON ABSORPTION
PHOTOLUMINESCENCE
SPECTROSCOPY
GAAS
Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
期刊论文
solid state communications, 1996, 卷号: 97, 期号: 5, 页码: 381-384
Fan WJ
;
Li MF
;
Chong TC
;
Xia JB
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  |  
浏览/下载:16/0
  |  
提交时间:2010/11/17
semiconductors
electronic band structure
PSEUDOPOTENTIAL CALCULATIONS
ELECTRONIC-STRUCTURE
GALLIUM NITRIDE
SEMICONDUCTORS
DIAMOND
High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
期刊论文
physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826
Li GH
;
Goni AR
;
Syassen K
;
Hou HQ
;
Feng W
;
Zhou JM
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/11/17
HYDROSTATIC-PRESSURE
EXCITON ABSORPTION
DEFORMATION POTENTIALS
LAYER SUPERLATTICES
BAND OFFSET
PHOTOLUMINESCENCE
GAAS
SPECTROSCOPY
DEPENDENCE
TEMPERATURE
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
期刊论文
journal of applied physics, 1996, 卷号: 79, 期号: 1, 页码: 188-194
Fan WJ
;
Li MF
;
Chong TC
;
Xia JB
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/11/17
GALLIUM NITRIDE
BAND-GAPS
PSEUDOPOTENTIAL CALCULATIONS
ALUMINUM NITRIDE
SEMICONDUCTORS
GROWTH
INSULATORS
CRYSTALS
SILICON
DIAMOND
SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD
期刊论文
physical review b, 1991, 卷号: 43, 期号: 17, 页码: 14040-14046
LI MF
;
ZHAO XS
;
GU ZQ
;
CHEN JX
;
LI YJ
;
WANG JQ
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/15
SILICON
SEMICONDUCTORS
CAPTURE
CENTERS
ELECTRONS
EMISSION
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