×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [27]
内容类型
期刊论文 [27]
发表日期
2011 [2]
2010 [1]
2009 [2]
2008 [2]
2006 [1]
2003 [2]
更多...
学科主题
半导体物理 [27]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共27条,第1-10条
帮助
限定条件
学科主题:半导体物理
内容类型:期刊论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 393-395
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
;
Lu, J.
;
Zhao, J.H.
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
收藏
  |  
浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires
期刊论文
chemphyschem, 2010, 卷号: 11, 期号: 15, 页码: 3329-3332
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/12/05
SILICON NANOWIRES
CATALYTIC GROWTH
BAND OFFSETS
SOLAR-CELLS
SEMICONDUCTORS
SUPERLATTICES
EFFICIENCY
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH
;
Li C
;
Zhou ZW
;
Lai HK
;
Chen SY
;
Ding WC
;
Cheng BW
;
Yu YD
收藏
  |  
浏览/下载:93/14
  |  
提交时间:2010/03/08
chemical vapour deposition
elemental semiconductors
energy gap
germanium
Ge-Si alloys
photoluminescence
semiconductor epitaxial layers
semiconductor quantum wells
silicon
tensile strength
Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 053107
作者:
Tan PH
;
Liu J
收藏
  |  
浏览/下载:61/1
  |  
提交时间:2010/03/08
colloidal crystals
II-VI semiconductors
infrared spectra
mercury compounds
nanostructured materials
photoluminescence
photonic crystals
semiconductor quantum dots
silicon-on-insulator
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q
;
Li, JB
;
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:74/1
  |  
提交时间:2010/03/08
EXCHANGE INTERACTION
SEMICONDUCTORS
GAAS
ENERGIES
DOTS
MN
First-principles study of transition metal impurities in Si
期刊论文
physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201
Zhang ZZ
;
Partoens B
;
Chang K
;
Peeters FM
收藏
  |  
浏览/下载:61/7
  |  
提交时间:2010/03/08
SILICON
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:
Jiang DS
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
ROOM-TEMPERATURE
SILICON
SEMICONDUCTORS
DISLOCATIONS
SPECTRA
A study of the growth and optical properties of AlInGaN alloys
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637
Huang JS
;
Dong X
;
Lu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:265/14
  |  
提交时间:2010/08/12
AlInGaN
MOCVD
localized exitons
quantum dots
TIME-RESOLVED PHOTOLUMINESCENCE
MULTIPLE-QUANTUM WELLS
LUMINESCENCE
RELAXATION
SILICON
GAN
Magnetic properties and rectifying behaviour of silicon doped with gadolinium
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
magnetic semiconductor
magnetic p-n junction
ion beam epitaxy
gadolinium silicides
METAL-INSULATOR-TRANSITION
P-N-JUNCTION
INDUCED FERROMAGNETISM
SI/SIER INTERFACE
BEAM EPITAXY
SEMICONDUCTORS
EXCITATION
MAGNETORESISTANCE
ALLOYS
©版权所有 ©2017 CSpace - Powered by
CSpace