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Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文
international magnetics conference (intermag), madrid, spain, may 04-08, 2008
作者:  Gan HD
收藏  |  浏览/下载:66/0  |  提交时间:2010/03/09
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载:224/60  |  提交时间:2010/03/29
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Han PD
收藏  |  浏览/下载:19/0  |  提交时间:2010/10/29


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