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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：185/32  |  提交时间：2010/05/04 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds  SEMICONDUCTORS  EMISSION  ORIGIN  DIODES   Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907 Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.) 收藏  |  浏览/下载：277/88  |  提交时间：2010/09/07 II-VI semiconductors  photoconductivity  photovoltaic effects  semiconductor epitaxial layers  spin-orbit interactions  valence bands  wide band gap semiconductors  zinc compounds   Dislocation core effect scattering in a quasitriangle potential well 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：311/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：233/42  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  interface states  semiconductor heterojunctions  silicon compounds  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY 期刊论文 journal of crystal growth, 1993, 卷号: 129, 期号: 0, 页码: 629-634 LU DC 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/15 THERMODYNAMIC ANALYSIS  ZNSE  PRESSURE  SEMICONDUCTORS  MOVPE  OMVPE