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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
收藏  |  浏览/下载:31/0  |  提交时间:2010/11/14
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure 期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG; Kong, GL; Zeng, XB; Hao, HY; Liu, FZ
收藏  |  浏览/下载:104/29  |  提交时间:2010/03/08
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文
nanotechnology, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789
作者:  Jin P;  Xu B
收藏  |  浏览/下载:53/0  |  提交时间:2010/04/11
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH
收藏  |  浏览/下载:82/10  |  提交时间:2010/08/12
THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS 期刊论文
physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195
REN GB; WANG ZG; XU B; BING Z
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/15


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