CORC

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CORC

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The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载：46/4  |  提交时间：2011/07/05
Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films 期刊论文
thin solid films, 2009, 卷号: 517, 期号: 6, 页码: 1989-1994
作者:  Li Y
收藏  |  浏览/下载：360/38  |  提交时间：2010/03/08
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe); Wang XL (Wang Xiao-Liang); Wang JX (Wang Jun-Xi); Hu GX (Hu Guo-Xin); Guo LC (Guo Lun-Chun); Li JM (Li Jin-Min)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
GaN  
Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744
Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Quantum-dot growth simulation on periodic stress of substrate 期刊论文
journal of chemical physics, 2005, 卷号: 123, 期号: 9, 页码: art.no.094708
作者:  Xu B
收藏  |  浏览/下载：149/46  |  提交时间：2010/03/17

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