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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence 期刊论文 journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126 Li H; Wang Z; Zhou K; Pang JB; Ke JY; Zhao YW 收藏  |  浏览/下载：59/1  |  提交时间：2010/03/08 GaSb  Proton irradiation  Defects  Positron lifetime  Photoluminescence   Silicon-on-insulating multi-layers for total-dose irradiation hardness 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 8, 页码: 1600-1603 Zhang EX; Yi WB; Liu XH; Chen M; Liu ZL; Xi W 收藏  |  浏览/下载：379/54  |  提交时间：2010/03/09 IMPLANTATION   Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文 semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573 Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X 收藏  |  浏览/下载：179/57  |  提交时间：2010/03/09 LAYERS   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 semi-insulating InP  ion implantation  silicon  annealing  activation  SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE   Nano-layer structure of silicon-on-insulator materials 会议论文 11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002 Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 SOI  nanostructure  microelectronic materials   JFET SOS devices: Processing and gamma radiation effects 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 作者:  Yu F 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 SILICON