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Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载:69/25  |  提交时间:2010/03/08
A model for scattering due to interface roughness in finite quantum wells 期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
作者:  Han XX
收藏  |  浏览/下载:60/0  |  提交时间:2010/04/11


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