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Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
journal of crystal growth, 2015, 卷号: 425, 页码: 381-384
Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02
Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2014/03/17
Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
thin solid films, 2013, 卷号: 534, 页码: 655–658
Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2014/05/08
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou
收藏  |  浏览/下载：18/0  |  提交时间：2014/05/16
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
thin solid films, 2013, 卷号: 534, 页码: 655-658
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：23/0  |  提交时间：2013/08/27
Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：16/0  |  提交时间：2013/05/13
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：84/7  |  提交时间：2011/07/05

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