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半导体研究所 [17]

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期刊论文 [17]

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半导体材料 [17]

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限定条件	学科主题：半导体材料

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	VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文 journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 40548 Zhao J; Zeng YP; Yang QM; Li YY; Cui LJ; Liu C 收藏 \| 浏览/下载：8/0 \| 提交时间：2011/09/14 ZINC BLENDE CDSE THIN-FILMS OPTICAL-PROPERTIES DEPOSITION ZNSE
	Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904 作者: Jin P; Wei HY; Song HP 收藏 \| 浏览/下载：185/32 \| 提交时间：2010/05/04 alloying annealing electrical conductivity excitons II-VI semiconductors magnesium compounds MOCVD coatings photoluminescence positron annihilation semiconductor thin films vacancies (crystal) wide band gap semiconductors zinc compounds SEMICONDUCTORS EMISSION ORIGIN DIODES
	Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏 \| 浏览/下载：25/0 \| 提交时间：2010/11/14 polycrystalline silicon thin film aluminum induced crystallization (111) preferred orientation INDUCED LAYER-EXCHANGE AMORPHOUS-SILICON SOLAR-CELLS GLASS SI ORIENTATION MODEL
	Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907 Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.) 收藏 \| 浏览/下载：277/88 \| 提交时间：2010/09/07 II-VI semiconductors photoconductivity photovoltaic effects semiconductor epitaxial layers spin-orbit interactions valence bands wide band gap semiconductors zinc compounds
	Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901 作者: Wei HY; Song HP; Jiao CM 收藏 \| 浏览/下载：380/108 \| 提交时间：2010/03/08 aluminium compounds core levels III-V semiconductors magnesium compounds semiconductor heterojunctions semiconductor-insulator boundaries X-ray photoelectron spectra
	Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712 作者: Song HP; Zhang B 收藏 \| 浏览/下载：31/0 \| 提交时间：2010/04/04 aluminium compounds effective mass gallium arsenide III-V semiconductors SCF calculations semiconductor quantum wires spectral line shift EXCHANGE INTERACTION ENERGY STATES ABSORPTION NANOWIRES ELECTRONS SUBBANDS WELLS FIELD
	Dislocation core effect scattering in a quasitriangle potential well 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者: Wei HY 收藏 \| 浏览/下载：236/104 \| 提交时间：2010/03/08 aluminium compounds carrier density carrier mobility dislocation density dislocation scattering gallium compounds III-V semiconductors semiconductor heterojunctions wide band gap semiconductors
	Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者: Jin P; Wei HY; Song HP 收藏 \| 浏览/下载：311/47 \| 提交时间：2010/03/08 conduction bands III-V semiconductors II-VI semiconductors indium compounds interface states polarisation semiconductor heterojunctions valence bands wide band gap semiconductors X-ray photoelectron spectra zinc compounds
	Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者: Xu B; Ye XL 收藏 \| 浏览/下载：69/0 \| 提交时间：2010/03/08 aluminium compounds gallium arsenide III-V semiconductors internal stresses reflectivity semiconductor heterojunctions semiconductor quantum wells
	Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114 作者: Song HP; Wei HY; Zhang B 收藏 \| 浏览/下载：198/0 \| 提交时间：2010/03/08 conduction bands III-V semiconductors indium compounds semiconductor heterojunctions semiconductor materials valence bands X-ray photoelectron spectra

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