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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of electron irradiation on hydrothermally grown zinc oxide single crystals 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028 Lu LW; So CK; Zhu CY; Gu QL; Li CJ; Fung S; Brauer G; Anwand W; Skorupa W; Ling CC 收藏  |  浏览/下载：110/1  |  提交时间：2010/03/08 SCHOTTKY CONTACTS   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK 收藏  |  浏览/下载：342/96  |  提交时间：2010/03/09 GaN