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科研机构
半导体研究所 [13]
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期刊论文 [11]
会议论文 [2]
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2011 [1]
2010 [1]
2009 [2]
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半导体材料 [13]
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Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX
;
Zhu QS
;
Xu B
;
Wang ZG
收藏
  |  
浏览/下载:39/3
  |  
提交时间:2011/07/05
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao)
;
Chen NF (Chen NuoFu)
;
Zhang XW (Zhang XingWang)
;
Bai YM (BaiYiMing)
;
Yin ZG (Yin ZhiGang)
;
Shi HW (Shi HuiWei)
;
Zhang H (Zhang Han)
;
Wang Y (Wang Yu)
;
Wang YS (Wang YanShuo)
;
Yang XL (Yang XiaoLi)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/11/14
polycrystalline silicon thin film
aluminum induced crystallization
(111) preferred orientation
INDUCED LAYER-EXCHANGE
AMORPHOUS-SILICON
SOLAR-CELLS
GLASS
SI
ORIENTATION
MODEL
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:
Wei TB
;
Wei XC
;
Duan RF
收藏
  |  
浏览/下载:84/6
  |  
提交时间:2010/03/08
HRXRD
PL
Stacking fault
HVPE
GaN
Semipolar
Effect of silver growth temperature on the contacts between Ag and ZnO thin films
期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:
Li XK
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  |  
浏览/下载:90/1
  |  
提交时间:2010/03/08
ZnO
Schottky barrier
interface
MSM structure
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Comparison of the properties of GaN grown on complex Si-based structures
期刊论文
applied physics letters, 2005, 卷号: 86, 期号: 8, 页码: art.no.081912
Zhou, SQ
;
Vantomme, A
;
Zhang, BS
;
Yang, H
;
Wu, MF
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  |  
浏览/下载:30/0
  |  
提交时间:2010/03/17
CHEMICAL-VAPOR-DEPOSITION
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
会议论文
symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Wu J
;
Zeng YP
;
Cui LJ
;
Zhu ZP
;
Wang BX
;
Wang ZG
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
INP(001)
EPITAXY
GAAS
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
会议论文
50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
quantum dots
high index
molecular beam epitaxy
photoluminescence
SURFACE SEGREGATION
ORIENTED GAAS
INGAAS
ISLANDS
WELLS
DISKS
Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 630-636
Wang HL
;
Ning D
;
Feng SL
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
self-organized quantum dots
InAs/GaAs
MBE
PL
STM
bimodal size distribution
MOLECULAR-BEAM EPITAXY
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
GROWTH
PHOTOLUMINESCENCE
TRANSITION
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