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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：51/3  |  提交时间：2011/07/05
Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者:  Cao YL;  Yang T
收藏  |  浏览/下载：19/0  |  提交时间：2011/07/05
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX; Zhu QS; Xu B; Wang ZG
收藏  |  浏览/下载：39/3  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  Yang T
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：50/4  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103
作者:  Yin HB;  Lin DF;  Hou QF;  Deng QW
收藏  |  浏览/下载：36/2  |  提交时间：2011/07/07
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05

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