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CORC

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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：75/2  |  提交时间：2011/07/05
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08
Magnetic properties of silicon doped with gadolinium 期刊论文
applied physics a-materials science & processing, 2003, 卷号: 77, 期号: 3-4, 页码: 599-602
Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY
收藏  |  浏览/下载：321/10  |  提交时间：2010/08/12
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH
收藏  |  浏览/下载：134/8  |  提交时间：2010/08/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:  Yu F
收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999
作者:  Yu F
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15

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