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科研机构
半导体研究所 [20]
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期刊论文 [17]
会议论文 [3]
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2010 [3]
2009 [3]
2008 [1]
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半导体材料 [20]
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Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
期刊论文
japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 100201
Wei TB (Wei Tongbo)
;
Wang JX (Wang Junxi)
;
Liu NX (Liu Naixin)
;
Lu HX (Lu Hongxi)
;
Zeng YP (Zeng Yiping)
;
Wang GH (Wang Guohong)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/14
LOW-TEMPERATURE ACTIVATION
FILMS
Thermal analysis and test for single concentrator solar cells
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 4, 页码: 61-64
作者:
Wang Yu
;
Yang Xiaoli
;
Zhang Xingwang
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/23
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:
Wei XC
;
Duan RF
;
Ding K
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  |  
浏览/下载:76/19
  |  
提交时间:2010/03/08
LOCALIZATION
SEMICONDUCTORS
EMISSION
BOXES
BAND
The growth temperatures dependence of optical and electrical properties of InN films
期刊论文
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B
;
Zhang, R
;
Xie, ZL
;
Xiu, XQ
;
Li, L
;
Kong, JY
;
Yu, HQ
;
Han, P
;
Gu, SL
;
Shi, Y
;
Zheng, YD
;
Tang, CG
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:48/2
  |  
提交时间:2010/03/08
metalorganic chemical vapor deposition
X-ray diffraction
photoluminescence
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.)
;
Liu XL (Liu, X. L.)
;
Wei HY (Wei, H. Y.)
;
Fan HB (Fan, H. B.)
;
Liang ZM (Liang, Z. M.)
;
Jin P (Jin, P.)
;
Yang SY (Yang, S. Y.)
;
Jiao CM (Jiao, C. M.)
;
Zhu QS (Zhu, Q. S.)
;
Wang ZG (Wang, Z. G.)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures
期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM
;
Wang XL
;
Hu GX
;
Wang JX
;
Xiao HL
;
Li JP
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
2DEG
MOCVD
semiconducting III-V materials
HEMT
power devices
HETEROSTRUCTURES
PASSIVATION
SAPPHIRE
ALGAN
FIELD
GAS
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2010/08/12
photoluminescence
metalorganic chemical vapor deposition
epilayer
semiconducting II-VI materials
MOLECULAR-BEAM EPITAXY
GAP
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