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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Peng YS (Peng Yin-Sheng); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Niu JB (Niu Jie-Bin); Jia R (Jia Rui); Wang ZG (Wang Zhan-Guo); Liang S (Liang Song); Yang XH (Yang Xiao-Hong)
收藏  |  浏览/下载:30/0  |  提交时间:2010/11/14
Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320
Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Hou YB (Hou Yanbing); Teng F (Teng Feng); Tan HR (Tan Hairen); Liu J (Liu Jie); Zhang XW (Zhang Xingwang); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:28/0  |  提交时间:2010/12/12
Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m 期刊论文
thin solid films, 2007, 卷号: 515, 期号: 10, 页码: 4348-4351
Wang SM; Tangring I; Gu QF; Sadeghi M; Larsson A; Wang XD; Ma CH; Buyanova IA; Chen WM
收藏  |  浏览/下载:116/0  |  提交时间:2010/03/29
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC; Qu SC; Zhou HY; Wang ZG
收藏  |  浏览/下载:118/0  |  提交时间:2010/04/11
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao)
收藏  |  浏览/下载:34/0  |  提交时间:2010/04/11
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences 期刊论文
materials science in semiconductor processing, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Zhao, YW; Dong, HW; Li, JM; Ling, LY
收藏  |  浏览/下载:38/11  |  提交时间:2010/03/17
Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960
Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:  Xu B;  Jiang DS;  Wang ZG
收藏  |  浏览/下载:84/7  |  提交时间:2010/08/12
The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 1-2, 页码: 93-96
Zhang JP; Sun DZ; Li XB; Wang XL; Fu RH; Kong MY
收藏  |  浏览/下载:29/0  |  提交时间:2010/08/12


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