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| Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者: Song HP ; Wei HY; Li CM; Jiao CM
  收藏 | 浏览/下载：66/4 | 提交时间：2011/07/05
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| Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者: Yang JK; Wei TB; Duan RF
收藏 | 浏览/下载：73/3 | 提交时间：2010/03/08
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| Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者: Wei TB; Duan RF
收藏 | 浏览/下载：33/0 | 提交时间：2010/03/29
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| Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 13, 页码: 3274-3279
Feng W; Li Y; Feng YY; Wu J
收藏 | 浏览/下载：81/0 | 提交时间：2010/04/11
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| Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者: Zhang SM; Zhao DG
收藏 | 浏览/下载：86/5 | 提交时间：2010/08/12
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| SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 19, 页码: 1601-1603
Yu GG; Ma JD; Zhu FG; Chai CL
收藏 | 浏览/下载：79/0 | 提交时间：2010/08/12
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| The PL "violet shift" of cerium dioxide on silicon 期刊论文
chinese science bulletin, 2001, 卷号: 46, 期号: 24, 页码: 2046-2048
Chai CL; Yang SY; Liu ZK; Liao MY; Chen NF; Wang ZG
收藏 | 浏览/下载：97/8 | 提交时间：2010/08/12
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| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
作者: Xu B; Ye XL
收藏 | 浏览/下载：40/0 | 提交时间：2010/08/12
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| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50
Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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| The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 471-474
Zhang JP; Sun DZ; Wang XL; Li XB; Kong MY; Zeng YP; Li JM; Lin LY
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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