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CORC

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Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY
收藏  |  浏览/下载：32/3  |  提交时间：2010/03/09
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY; Wang JH; Deng HF; Lin LY
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15
Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 85-89
Liao MY; Meng XM; Zhou XT; Hu JQ; Wang ZG
收藏  |  浏览/下载：145/8  |  提交时间：2010/08/12
The formation and stability of Si1-xCx alloys in Si implanted with carbon 期刊论文
chinese science bulletin, 2001, 卷号: 46, 期号: 3, 页码: 200-204
Wang YS; Li JM; Jin YF; Wang YT; Sun GS; Lin LY
收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12
Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12
Formation of InAs quantum dots on low-temperature GaAs epi-layer 期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 209-213
Wang XD; Niu ZC; Wang H; Feng SL
收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12
Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355
Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY
收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12
Damage removal and strain relaxation in As+-implanted Si0.57Ge0.43 epilayers grown by gas source molecular beam epitaxy 期刊论文
chinese physics letters, 1997, 卷号: 14, 期号: 3, 页码: 209-212
Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/17

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