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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文 journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25 Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏  |  浏览/下载：21/0  |  提交时间：2010/04/11 nanostructure  vapor phase transport  ZnO  semiconductor materials  PHYSICAL VAPOR-DEPOSITION  OPTICAL-PROPERTIES  THERMAL EVAPORATION  FIELD-EMISSION  NANOWIRES  NANORODS  MECHANISM  ARRAYS   Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, J; Hu, LZ; Sun, YC; Wang, ZY 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29 GROWTH   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文 journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH 收藏  |  浏览/下载：135/8  |  提交时间：2010/08/12 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors  ELECTRON-MOBILITY TRANSISTOR  CARRIER DENSITY  QUANTUM-WELLS  BAND-GAP   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009 作者:  Xu B 收藏  |  浏览/下载：125/19  |  提交时间：2010/08/12 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文 1999 ieee hong kong electron devices meeting (hkedm 99), shatin, hong kong, 36337 作者:  Xu B 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29