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科研机构
半导体研究所 [23]
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期刊论文 [23]
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2010 [1]
2009 [2]
2008 [3]
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半导体材料 [23]
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Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Xu PF (Xu Peng-Fei)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:141/24
  |  
提交时间:2010/09/07
quantum dot
symmetrized Hamiltonian
Burt-Foreman Hamiltonian
finite element method
spurious solutions
EFFECTIVE-MASS APPROXIMATION
P THEORY
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:69/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:
Yang H
;
Zhao DG
;
Zhu JJ
;
Yang H
;
Zhang SM
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  |  
浏览/下载:182/43
  |  
提交时间:2010/03/08
Cathodoluminescence
MOCVD
AlGaN
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 1, 页码: art. no. 013106
Zhou, ZY
;
Tang, CG
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
FINE-STRUCTURE
QUANTUM-WELLS
GAAS/ALAS SUPERLATTICES
SEMICONDUCTORS
TEMPERATURE
HOLE
Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study
期刊论文
european physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
Shi HL
;
Duan Y
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  |  
浏览/下载:151/26
  |  
提交时间:2010/03/08
SPECIAL QUASIRANDOM STRUCTURES
ZINCBLENDE
OFFSETS
GAASN
CDTE
BEO
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903
作者:
Jin P
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  |  
浏览/下载:547/12
  |  
提交时间:2010/04/11
GROWTH
INAS
GAAS
SURFACES
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B
;
Shen H
;
Liang ZC
;
Chen Z
;
Kong GL
;
Liao XB
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  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
chemical vapour deposition
electrical properties and measurements
scanning electron microscopy
polycrystalline silicon
GRAIN-BOUNDARIES
STATES
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
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  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy
期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1777-1781
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:28/0
  |  
提交时间:2010/03/17
optical anisotropy
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