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科研机构
半导体研究所 [25]
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期刊论文 [21]
会议论文 [4]
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2011 [2]
2009 [2]
2008 [1]
2007 [2]
2006 [2]
2005 [1]
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半导体材料 [25]
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Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F
;
Li B
;
Akopian N
;
Perinetti U
;
Chen YH
;
Peeters FM
;
Rastelli A
;
Zwiller V
;
Schmidt OG
收藏
  |  
浏览/下载:71/5
  |  
提交时间:2011/07/05
Quantum Ring
Quantum Dot
Neutral Exciton
Aharonov Bohm Effect
Gate Controlled
Selective Etching
ENERGY-SPECTRA
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
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  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films
期刊论文
applied surface science, 2007, 卷号: 253, 期号: 24, 页码: 9506-9512
Jia CH (Jia Caihong)
;
Chen YH (Chen Yonghai)
;
Ding LH (Ding Linghong)
;
Zhang WF (Zhang Weifeng)
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  |  
浏览/下载:33/0
  |  
提交时间:2010/03/29
ferroelectric thin film
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method
期刊论文
journal of crystal growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Yin ZG (Yin Zhigang)
;
Chen NF (Chen Nuofu)
;
Dai RX (Dai Ruixuan)
;
Liu L (Liu Lei)
;
Zhang XW (Zhang Xingwang)
;
Wang XH (Wang Xiaohui)
;
Wu JL (Wu Jinliang)
;
Chai CL (Chai Chunlin)
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  |  
浏览/下载:71/0
  |  
提交时间:2010/03/29
nanostructures
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well
期刊论文
journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33
Fan WJ
;
Abiyasa AP
;
Tan ST
;
Yu SF
;
Sun XW
;
Xia JB
;
Yeo YC
;
Li MF
;
Chong TC
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/04/11
computer simulation
low dimensional structures
zinc compounds
semiconducting II-VI materials
OPTICAL GAIN SPECTRA
BAND-STRUCTURES
ROOM-TEMPERATURE
LASERS
Aluminium doping induced enhancement of p-d coupling in ZnO
期刊论文
journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
作者:
Han XX
;
Wei HY
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
ELECTRONIC-STRUCTURE CALCULATIONS
II-VI SEMICONDUCTORS
THIN-FILMS
PHOTOELECTRON-SPECTROSCOPY
DOPED ZNO
1ST-PRINCIPLES
CONDUCTION
STATES
Structural, magnetic properties and photoemission study of Ni-doped ZnO
期刊论文
solid state communications, 2005, 卷号: 135, 期号: 7, 页码: 430-433
作者:
Yin ZG
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  |  
浏览/下载:31/12
  |  
提交时间:2010/03/17
diluted magnetic semiconductors
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