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GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 20, 页码: art. no. 201102
You JB (You J. B.); Zhang XW (Zhang X. W.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Yin ZG (Yin Z. G.); Tan HR (Tan H. R.); Zhang WJ (Zhang W. J.); Chu PK (Chu P. K.); Cui B (Cui B.); Wowchak AM (Wowchak A. M.); Dabiran AM (Dabiran A. M.); Chow PP (Chow P. P.)
收藏  |  浏览/下载:225/45  |  提交时间:2010/06/18
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:196/52  |  提交时间:2010/04/28
Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 34-38
Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua
收藏  |  浏览/下载:22/0  |  提交时间:2010/11/23
Zinc phthalocyanine (ZnPc) incorporated into silicon matrix grown by plasma enhanced chemical vapor deposition (PECVD) 会议论文
solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007
Zhang, CS; Wang, ZG; Shi, MJ; Peng, WB; Diao, HW; Liao, XB; Long, GL; Zeng, XB
收藏  |  浏览/下载:51/0  |  提交时间:2010/03/09
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.)
收藏  |  浏览/下载:21/0  |  提交时间:2010/03/29
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:31/0  |  提交时间:2010/04/11
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang Y
收藏  |  浏览/下载:46/0  |  提交时间:2010/04/11
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1549-1554
Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/23
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15


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