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First-principles study of structural, elastic and lattice dynamical properties of chalcopyrite BeSiV2 and MgSiV2 (V = P, As, Sb) 期刊论文
journal of alloys and compounds, 2014, 卷号: 611, 页码: 210-218
Shi, LW; Hu, J; Qin, Y; Duan, YF; Wu, L; Yang, XQ; Tang, G
收藏  |  浏览/下载：30/0  |  提交时间：2015/03/25
Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文
physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302
Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:  Liu K;  Tan FR
收藏  |  浏览/下载：87/5  |  提交时间：2011/07/05
Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO2/TiAu/SiO2 structure 期刊论文
science china-technological sciences, 2011, 卷号: 54, 期号: 4, 页码: 830-834
作者:  Zhang H;  Zhang XW;  Wang Y;  Huang TM
收藏  |  浏览/下载：54/8  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05

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