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科研机构
半导体研究所 [11]
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期刊论文 [10]
会议论文 [1]
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2011 [3]
2009 [1]
2008 [2]
2007 [2]
2006 [1]
2003 [1]
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半导体材料 [11]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:69/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066
Fan, HB
;
Yang, SY
;
Zhang, PF
;
Wei, HY
;
Liu, XL
;
Jiao, CM
;
Zhu, QS
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:80/3
  |  
提交时间:2010/03/08
SINGLE-CRYSTAL
PHASE EPITAXY
SAPPHIRE
NANORODS
FILMS
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
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  |  
浏览/下载:66/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG
;
Liu, XL
;
Jiao, CM
;
Wei, HY
;
Kang, TT
;
Zhang, PF
;
Zhang, RQ
;
Fan, HB
;
Zhu, QS
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  |  
浏览/下载:55/4
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
WURTZITE-TYPE CRYSTALS
THIN-FILMS
ALUMINUM NITRIDE
INTRINSIC STRESS
GAN
SAPPHIRE
AIN
DEPOSITION
STRAIN
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer
期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ
;
Wang J
;
Wang QY
;
Duan Y
;
Zeng YP
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
ZINC-OXIDE FILMS
MOLECULAR-BEAM EPITAXY
SAPPHIRE
GROWTH
The growth morphologies of GaN layer on Si(111) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA
;
Liu XL
;
Lu DC
;
Yuan HR
;
Hu GQ
;
Wang XH
;
Wang ZG
;
Duan XF
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/08/12
Si(111) substrate
heteroepitaxy
metalorganic chemical vapor deposition
GaN
LIGHT-EMITTING-DIODES
CHEMICAL-VAPOR-DEPOSITION
NUCLEATION LAYERS
BUFFER LAYER
SILICON
SAPPHIRE
NITRIDE
EPITAXY
STRESS
STRAIN
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