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科研机构
半导体研究所 [23]
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期刊论文 [23]
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2013 [3]
2011 [4]
2010 [2]
2009 [1]
2008 [2]
2007 [4]
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半导体材料 [23]
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Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 7, 页码: 7305
Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo
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浏览/下载:15/0
  |  
提交时间:2014/03/18
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates
期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin
;
Sun, Guosheng
;
Yu, Jun
;
Zheng, Liu
;
Liu, Xingfang
;
Zhang, Feng
;
Yan, Guoguo
;
Li, Xiguang
;
Wang, Zhanguo
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/09/17
Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates
期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin
;
Sun, Guosheng
;
Yu, Jun
;
Zheng, Liu
;
Liu, Xingfang
;
Zhang, Feng
;
Yan, Guoguo
;
Li, Xiguang
;
Wang, Zhanguo
收藏
  |  
浏览/下载:17/0
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提交时间:2014/03/17
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP
;
Wu J
;
Lu YW
;
Li ZW
;
Song YF
;
Li CM
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/02/06
FIELD-EFFECT TRANSISTORS
INTERFACE ROUGHNESS
QUANTUM-WELLS
MOBILITY
HETEROJUNCTION
TRANSPORT
MODEL
Electron mobility in modulation-doped AlSb/InAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:
Zhang Y
;
Li YB
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浏览/下载:53/5
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提交时间:2011/07/05
ACOUSTIC-PHONON-SCATTERING
LOW-POWER APPLICATIONS
TRANSPORT-PROPERTIES
INTERFACE ROUGHNESS
INAS/ALSB HEMTS
HETEROSTRUCTURES
INAS
TRANSISTORS
GAS
LAYERS
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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浏览/下载:28/0
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提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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浏览/下载:23/0
  |  
提交时间:2012/06/14
Epitaxial growth
Ethylene
Growth rate
Morphology
Surface roughness
Surface roughness scattering in two dimensional electron gas channel
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B
;
Lu YW
;
Jin GR
;
Zhao Y
;
Wang XL
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:48/5
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
MOBILITY ALGAN/GAN HETEROSTRUCTURES
RAY PHOTOEMISSION SPECTROSCOPY
PERFORMANCE
ALN
MODFETS
INN
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:
Zhang ML
;
Hou QF
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浏览/下载:129/30
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提交时间:2010/03/08
AlGaN/AlN/GaN
HEMT
MOCVD
SiC substrate
Power device
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