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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文 3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008 Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09 bulge test fracture property  silicon carbide thin films  Weibull distribution function   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/15 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文 1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 poly-Si  structure  hot-wire  plasma-enhanced chemical vapor deposition (PECVD)  CHEMICAL-VAPOR-DEPOSITION  MICROCRYSTALLINE SILICON  HYDROGEN   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS