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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载：27/0  |  提交时间：2010/11/15 Czochralski method  growth from melt  semiconductor silicon  argon gas flow  computer simulation  oxygen content  FURNACE PRESSURE   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility