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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 4, 页码: art. no. 047801 Tang GH (Tang Guang-Hua); Xu B (Xu Bo); Jiang; LW (Jiang Li-Wen); Kong JX (Kong Jin-Xia); Kong; N (Kong Ning); Liang DC (Liang De-Chun); Liang P (Liang Ping); Ye XL (Ye Xiao-Ling); Jin P (Jin Peng); Liu FQ (Liu Feng-Qi); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：271/36  |  提交时间：2010/04/28 MU-M  TEMPERATURE  DETECTORS  OPERATION   Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: art. no. 063107 Xu DW; Tong CZ; Yoon SF; Zhao LJ; Ding Y; Fan WJ 收藏  |  浏览/下载：131/19  |  提交时间：2010/04/28 gallium arsenide  III-V semiconductors  indium compounds  quantum dot lasers  surface emitting lasers  DEPENDENT OUTPUT CHARACTERISTICS  SEMICONDUCTOR-LASERS  1.3-MU-M  VCSELS  WELL  CONFINEMENT  POWER   Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 10, 页码: 2984-2986 Xiao JL (Xiao Jin-Long); Huang YZ (Huang Yong-Zhen); Du Y (Du Yun); Zhao, H (Zhao Huan); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 LINEWIDTH ENHANCEMENT FACTOR   Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 作者:  Jin P;  Li CM;  Xu B;  Ye XL 收藏  |  浏览/下载：14/2  |  提交时间：2010/10/29 SPECTRUM