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Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
ieee transactions on electron devices, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Liu, Yan; Yan, Jing; Wang, Hongjuan; Zhang,Qingfang; Liu, Mingshan; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
收藏  |  浏览/下载:25/0  |  提交时间:2015/03/20
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载:19/0  |  提交时间:2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
收藏  |  浏览/下载:30/0  |  提交时间:2014/04/04
Squeeze effect and coherent coupling behaviour in photonic crystal vertical-cavity surface-emitting lasers 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 11, 页码: article no.115104
作者:  Jiang B
收藏  |  浏览/下载:60/6  |  提交时间:2011/07/06
Effect of oxidation on the optical and surface properties of AlGaN 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8706-8709
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Chen J (Chen J.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.)
收藏  |  浏览/下载:19/0  |  提交时间:2010/04/11
Design and fabrication of GaAs OMIST photodetector 会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Kang XJ; Lin SM; Liao QW; Gao JH; Liu SA; Cheng P; Wang HJ; Zhang CH; Wang QM
收藏  |  浏览/下载:9/0  |  提交时间:2010/10/29


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