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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Investigation on the structural origin of n-type conductivity in InN films 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES   Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255 Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 STRESS   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI