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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 7, 页码: 2125-2127 Xue CL (Xue Chun-Lai); Yao F (Yao Fei); Shi WH (Shi Wen-Hua); Cheng BW (Cheng Bu-Wen); Wang HJ (Wang Hong-Jie); Yu JZ (Yu Jin-Zhong); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/29 MOBILE COMMUNICATION   Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505 作者:  Chen Lianghui;  Zhao Degang;  Zhu Jianjun;  Zhang Shuming 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23 10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 9, 页码: 917-920 Li BX; Zhu HL; Zhang J; Zhao Q; Pian JQ; Ding Y; Wang BJ; Bian J; Zhao LJ; Wang W 收藏  |  浏览/下载：107/24  |  提交时间：2010/03/17 BANDWIDTH   Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 544-547 作者:  Pan JQ 收藏  |  浏览/下载：52/32  |  提交时间：2010/03/17 VAPOR-PHASE EPITAXY   1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Zhang W; Pan Z; Li LH; Zhang RK; Lin YW; Wu RG 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 GaInNAs  photodetector  resonant cavity enhanced  high speed property  MOLECULAR-BEAM EPITAXY  SCHOTTKY PHOTODIODES  PERFORMANCE  EFFICIENCY  OPERATION  BANDWIDTH  DESIGN  SI