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Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys 期刊论文
Phys. Chem. Chem. Phys., 2017, 卷号: 19, 页码: 27031--27037
作者:  Wenqi Huang;  Hong Yang;  Buwen Cheng;  Chunlai Xue
收藏  |  浏览/下载：17/0  |  提交时间：2018/07/02
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 028503
Li, XJ; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Wu, LL; Li, L; Le, LC; Yang, J; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate 期刊论文
acta physica sinica, 2013, 卷号: 62, 期号: 7, 页码: 076108
Liu Zhi; Li Ya-Ming; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming
收藏  |  浏览/下载：11/0  |  提交时间：2013/10/10
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate 期刊论文
acta physica sinica, 2013, 卷号: 62, 期号: 7, 页码: 076108
Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming
收藏  |  浏览/下载：14/0  |  提交时间：2014/04/30
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 067302
Wang YB; Xu Y; Zhang Y; Yu X; Song GF; Chen LH
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/07
Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
作者:  Ma WQ;  Yang T;  Cao YL
收藏  |  浏览/下载：241/62  |  提交时间：2010/03/08
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 7, 页码: 3044-3048
Ding WC; Liu Y; Zhang Y; Guo JC; Zuo YH; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载：117/2  |  提交时间：2010/03/08
Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films 期刊论文
optics communications, 2008, 卷号: 281, 期号: 3, 页码: 439-443
Zhang, T; Zhang, WF; Chen, YH; Yin, J
收藏  |  浏览/下载：114/20  |  提交时间：2010/03/08
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08

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