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| Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507 Yu X; Gu YX; Wang Q; Wei X; Chen LH 收藏  |  浏览/下载:65/4  |  提交时间:2011/07/06
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| Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文 journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966 Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM 收藏  |  浏览/下载:54/6  |  提交时间:2011/07/05
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| Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文 physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314 作者: Wang H; Wang H; Yang; Jiang DS 收藏  |  浏览/下载:122/5  |  提交时间:2010/04/28
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| Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载:110/2  |  提交时间:2010/04/22
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| Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载:28/0  |  提交时间:2010/11/02
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| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载:35/0  |  提交时间:2010/12/12
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| Substantial photo-response of InGaN p-i-n homojunction solar cells 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009 Zeng SW; Zhang BP; Sun JW; Cai JF; Chen C; Yu JZ 收藏  |  浏览/下载:58/7  |  提交时间:2010/03/08
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| Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载:37/0  |  提交时间:2010/04/11
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| Photoluminescence of Te isoelectronic traps in ZnSeTe/ZnSe quantum wells under hydrostatic pressure 期刊论文 journal of infrared and millimeter waves, 2002, 卷号: 21, 期号: 1, 页码: 28-32 Fang ZL; Li GH; Han HX; Ding K; Chen Y; Peng CL; Yuan SX 收藏  |  浏览/下载:80/6  |  提交时间:2010/08/12
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| Phonon-induced Raman scattering in GaNAs 期刊论文 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 11-14 作者: Tan PH; Jiang DS 收藏  |  浏览/下载:87/6  |  提交时间:2010/08/12
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