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High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability 会议论文
conference on semiconductor lasers and applications iv, beijing, peoples r china, oct 18-19, 2010
Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Chen LH (Chen Liang-Hui)
收藏  |  浏览/下载：53/4  |  提交时间：2011/07/14
High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs 期刊论文
ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
Xu DW; Yoon SF; Tong CZ; Zhao LJ; Ding Y; Fan WJ
收藏  |  浏览/下载：111/2  |  提交时间：2010/03/08
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Wei QX; Ren ZW; He ZH; Niu ZC
收藏  |  浏览/下载：77/0  |  提交时间：2010/03/08
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
8th pacific rim conference on lasers and electro-optics, shanghai, peoples r china, aug 30-sep 03, 2009
作者:  Yang T;  Ma WQ
收藏  |  浏览/下载：159/20  |  提交时间：2010/06/04
Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
作者:  Ma WQ;  Yang T;  Cao YL
收藏  |  浏览/下载：241/62  |  提交时间：2010/03/08
Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 8, 页码: art. no. 085117
Ding Y; Fan WJ; Xu DW; Tong CZ; Yoon SF; Zhang DH; Zhao LJ; Wang W; Liu Y; Zhu NH
收藏  |  浏览/下载：67/25  |  提交时间：2010/03/08
Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures 期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 6, 页码: 2182-2184
作者:  Yang T
收藏  |  浏览/下载：76/8  |  提交时间：2010/03/08
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文
ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  Yang T;  Cao YL;  Ma WQ
收藏  |  浏览/下载：238/72  |  提交时间：2010/03/08
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008
Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09
Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m 期刊论文
optics communications, 2008, 卷号: 281, 期号: 6, 页码: 1582-1587
Mao, RW; Tsai, CS; Yu, JZ; Wang, QM
收藏  |  浏览/下载：39/1  |  提交时间：2010/03/08

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