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CORC

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Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：123/5  |  提交时间：2010/04/22
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载：85/0  |  提交时间：2010/08/17
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106
作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/29
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29

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