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AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM
收藏  |  浏览/下载:36/0  |  提交时间:2010/03/09
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD 会议论文
symposium on group-4 semiconductor nanostructures held at the 2004 mrs fall meeting, boston, ma, nov 29-dec 02, 2004
Wang, XX; Zhang, JG; Wang, QM
收藏  |  浏览/下载:202/48  |  提交时间:2010/03/29


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