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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：134/0  |  提交时间：2010/03/09 GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 pyramidal patterned substrate  InGaN/GaN  light-emitting diode  wet etching   Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P 会议论文 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 Sun, MX; Tan, MQ; Zhao, M 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 antireflective coatings  superluminescent diodes  double source electron beam evaporation technology   Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Li, Y; Yi, XY; Wang, XD; Guo, JX; Wang, LC; Wang, GH; Yang, FH; Zeng, YP; Li, JM 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 GaN  LED  plasma  damage  etch  ICP  PECVD   Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文 11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002 作者:  Zhao DG 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 wafer bunding  cubic GaN  LIGHT-EMITTING-DIODES  FIELD-EFFECT TRANSISTOR  SINGLE-CRYSTAL GAN  MICROWAVE PERFORMANCE  MIRROR  JUNCTION   High brightness AlGaInP orange light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Li YZ; Wang GH; Ma XY; Peng HI; Wang ST; Chen LH 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 high brightness  LED  MOCVD  AlGaInP   Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Wang GH; Ma XY; Zhang YF; Peng HI; Wang ST; Li YZ; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 LED  coupled distributed Bragg reflector  MOCVD  AlGaInP