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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文 2nd conference on optoelectronic devices and integration, beijing, peoples r china, nov 12-15, 2007 Wang, L; Zhao, LJ; Chen, WX; Pan, JQ; Zhou, F; Zhu, HL; Wang, W 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/09 photonic integrated circuit  Y-branch  superluminescent diode  bundle integrated guide  far field pattern  reactive ion etching   Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding 会议论文 conference on optoelectronic materials and devices, gwangju, south korea, sep 05-07, 2006 Yang GH (Yang Guohua); He GR (He Guorong); Zheng WH (Zheng Wanhua); Chen LH (Chen Lianghui) 收藏  |  浏览/下载：85/22  |  提交时间：2010/03/29 Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文 10th international meeting on ferroelectricity (imf-10), madrid, spain, sep 03-07, 2001 Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 Bi2Ti2O7  thin film  MOCVD  (111) orientation  CHEMICAL-VAPOR-DEPOSITION  CRYSTAL THIN-FILMS   Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Yu JZ; Huang CJ; Cheng BW; Zuo YH; Luo LP; Wang QM 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15 Tunable MQW-DBR lasers using selective area growth 会议论文 4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000 Liu GL; Wang W; Zhang JY; Chen WX; Xu GY; Zhang BJ; Zhou F; Wang XJ; Zhu HL 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 selective area growth  multi-quantum-well  distributed Bragg reflector laser  MOCVD  tunable laser  EPITAXY   Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 作者:  Zhao DG 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 cubic GaN  buffer layer  atomic force microscopy  reflection high-energy electron diffraction  MOVPE   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES