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CORC

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The open-pin failure of power device under the combined effect of thermo-migration and electro-migration 期刊论文
Chinese Science Bulletin, 2020, 卷号: 65, 期号: 20, 页码: 2169-2177
作者:  Gao Liyin;  Li Caifu;  Cao Lihua;  Liu Zhiquan
收藏  |  浏览/下载：15/0  |  提交时间：2021/02/03
Topological evolution of correlated band structures and heavy-fermion-like behavior in a molybdenum-based metal organic framework C48S36Mo6 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 卷号: 32
作者:  Wu, Gang;  Yang, Xiaoping
收藏  |  浏览/下载：20/0  |  提交时间：2020/11/26
Terbium-based metal-organic frameworks: highly selective and fast respond sensor for styrene detection and construction of molecular logic gate 期刊论文
JOURNAL OF HAZARDOUS MATERIALS, 2020, 卷号: 388, 页码: 10
作者:  Feng, Li;  Dong, Chengli;  Li, Mingfeng;  Li, Lanxin;  Jiang, Xin
收藏  |  浏览/下载：9/0  |  提交时间：2020/06/15
A FinFET with one atomic layer channel 期刊论文
NATURE COMMUNICATIONS, 2020, 卷号: 11
作者:  Chen, Mao-Lin;  Sun, Xingdan;  Liu, Hang;  Wang, Hanwen;  Zhu, Qianbing
收藏  |  浏览/下载：26/0  |  提交时间：2020/11/23
Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation 期刊论文
NANOMATERIALS, 2020, 卷号: 10, 期号: 3, 页码: 12
作者:  Zheng, Qianying;  Xia, Liangping;  Tang, Linlong;  Du, Chunlei;  Cui, Hongliang
收藏  |  浏览/下载：10/0  |  提交时间：2020/08/24
Layer dependent direct tunneling behaviors through two dimensional titania nanosheets 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2020, 卷号: 173, 页码: 5
作者:  Pu, Yayun;  Xie, Xiong;  Wang, Liang;  Shen, Jun
收藏  |  浏览/下载：47/0  |  提交时间：2020/08/24
Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:  Qi, Shaocheng;  Cunha, Joao;  Guo, Tian-Long;  Chen, Peiqin;  Zaccaria, Remo Proietti
收藏  |  浏览/下载：13/0  |  提交时间：2020/12/16
Modeling of a Smart Nano Force Sensor Using Finite Elements and Neural Networks 期刊论文
International Journal of Automation and Computing, 2020, 卷号: 17, 期号: 2, 页码: 279-291
作者:  Farid Menacer;  Abdelmalek Kadr;  Zohir Dibi
收藏  |  浏览/下载：9/0  |  提交时间：2021/02/22
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：58/0  |  提交时间：2021/02/02
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：35/0  |  提交时间：2021/02/02

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