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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：9/0  |  提交时间：2019/11/21 passivation layers (PVLs)  light illumination stress stability  Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  thin film transistors (TFTs)   Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 3283-3290 作者:  Ding, Xingwei[1];  Yang, Jun[2];  Qin, Cunping[3];  Yang, Xuyong[4];  Ding, Tao[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22 Atomic layer deposition  density of states (DOS)  oxygen defects  nitrogen-doped ZnO (ZnON) thin-film transistors (TFTs)   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 7 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)   Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: Vol.65 No.7, 页码: 2844-2849 作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26 Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)  light illumination stress stability  passivation layers (PVLs)  thin film transistors (TFTs)