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The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08
Influences of total ionizing dose on single event effect sensitivity in floating gate cells 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103
作者:  Zhao, Pei-Xiong;  Liu, Tian-Qi;  Ye, Bing;  Luo, Jie;  Sun, You-Mei
收藏  |  浏览/下载：33/0  |  提交时间：2018/10/08
Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge 期刊论文
CHIN. PHYS. LETT., 2018
作者:  Bi JS(毕津顺);  Xu YN(徐彦楠);  Li B(李博);  Xi K(习凯);  Wang HB(王海滨)
收藏  |  浏览/下载：14/0  |  提交时间：2019/04/12
A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect 期刊论文
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 卷号: 31, 期号: 1, 页码: 183-189
作者:  Xu, Jingjie;  Ma, Zhaocan;  Li, Hongliang;  Song, Yu;  Zhang, Linbo
收藏  |  浏览/下载：37/0  |  提交时间：2018/07/30
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997, 1004
作者:  Chen, Zhuojun;  Ding, Ding;  Dong, Yemin;  Shan, Yi;  Zhou, Shuxing
收藏  |  浏览/下载：43/0  |  提交时间：2018/12/28
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
收藏  |  浏览/下载：34/0  |  提交时间：2018/09/18
gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64
作者:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong)
收藏  |  浏览/下载：35/0  |  提交时间：2018/01/31
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏  |  浏览/下载：38/0  |  提交时间：2018/11/20
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
作者:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
收藏  |  浏览/下载：17/0  |  提交时间：2018/08/07
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
作者:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ]
收藏  |  浏览/下载：44/0  |  提交时间：2018/11/20

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