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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High magnetic field influence on the molecular orientation and the morphology of iron phthalocyanine thin films 期刊论文 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 15, 页码: 1-8 作者:  Huang Chao;  Liu Ling-Yun;  Fang Jun;  Zhang Wen-Hua;  Wang Kai 收藏  |  浏览/下载：19/0  |  提交时间：2017/11/21 Organic Semiconductor  Molecular Orientation  Organic Molecular Beam Deposition  Near-edge X-ray Absorption Fine Structure   Properties of AlN film grown on Si (111) 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 435 作者:  Dai, YQ;  Li, SM;  Sun, Q(孙钱);  Peng, Q;  Gui, CQ 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/11 Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 期号: 2 作者:  Dai, YQ;  Li, SM;  Gao, HW;  Wang, WH;  Sun, Q(孙钱) 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11 The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31, 期号: 6 作者:  Jahn, U;  Musolino, M;  Lahnemann, J;  Dogan, P;  Garrido, SF 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/11 Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 671 作者:  Wang, K;  Xing, YH;  Han, J;  Zhao, KK;  Guo, LJ 收藏  |  浏览/下载：49/0  |  提交时间：2017/03/11 Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts 期刊论文 NANO LETTERS, 2016 Du, Wenna; Yang, Xiaoguang; Pan, Huayong; Ji, Xianghai; Ji, Haiming; Luo, Shuai; Zhang, Xingwang; Wang, Zhanguo; Yang, Tao 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Planar nanowire  InAsSb  growth direction  HRTEM  CAFM  INDIUM-PHOSPHIDE NANOWIRES  III-V NANOWIRES  BUILDING-BLOCKS  GAAS NANOWIRES  GUIDED GROWTH  SEEDED GROWTH  DEFECT-FREE  VLS GROWTH  SILICON  TRANSISTORS   Atomistic study of the copper cluster deposition on Si(001) and Si(111) surface 会议论文 Chinese Materials Congress on Methods of Design and Characterization of Materials, Research and Development of Technological Processes, 2015, Guiyang, China, July 10, 2015 - July 14, 2015 作者:  Gong, Hengfeng;  Li, Gongping;  Zhang, Shixu;  Lu, Wei;  Wang, Lumin 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Silicon  Characterization  Deposition  Film growth  Interfaces (materials)  Mixing  Molecular dynamics  Morse potential  Silicides  Substrates  Surface segregation  Cluster  Cluster deposition  Crystallographic orientations  Epitaxial relations  Film-substrate interfaces  Molecular dynamics simulations  Silicide formation  Silicon segregation   Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step 期刊论文 CRYSTENGCOMM, 2016, 卷号: 18, 期号: 36, 页码: 6817-6823 作者:  Yang, Bing;  Zhuang, Hao;  Li, Junhao;  Huang, Nan;  Liu, Lusheng 收藏  |  浏览/下载：0/0  |  提交时间：2021/02/02