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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2016    内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Insights into the transmission of respiratory infectious diseases through empirical human contact networks 其他 2016-01-01 Huang, Chunlin; Liu, Xingwu; Sun, Shiwei; Li, Shuai Cheng; Deng, Minghua; He, Guangxue; Zhang, Haicang; Wang, Chao; Zhou, Yang; Zhao, Yanlin; Bu, Dongbo 收藏  |  浏览/下载：22/0  |  提交时间：2017/12/04 MODEL  WORLD   Prolonged Morphine Exposure Induces Increased Firm Adhesion in an in Vitro Model of the Blood-Brain Barrier 其他 2016-01-01 Strazza, Marianne; Pirrone, Vanessa; Wigdahl, Brian; Dampier, Will; Lin, Wei; Feng, Rui; Maubert, Monique E.; Weksler, Babette; Romero, Ignacio A.; Couraud, Pierre-Olivier; Nonnemacher, Michael R. 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 blood-brain barrier  brain microvascular endothelial cells (BMEC)  morphine  (peripheral blood mononuclear cell) PBMC  cellular adhesion molecules (CAM)  CENTRAL-NERVOUS-SYSTEM  NECROSIS-FACTOR-ALPHA  MICROVASCULAR ENDOTHELIAL-CELLS  IMMUNE SURVEILLANCE  MULTIPLE-SCLEROSIS  ICAM-1  EXPRESSION  RECEPTOR  HIV-1  PERMEABILITY   ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Electrostatic discharge (ESD)  N-channel lateral-diffused MOSFET (nLDMOS)  Secondary breakdown current (I-t2)  Shallow-trench isolation (STI)  Silicon-controller rectifier (SCR)   ESD reliability improvement of the 0.25-��m 60-V power nLDMOS with discrete embedded SCRs separated by STI structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 P-type laterally-diffused metal oxide semiconductor (pLDMOS)  Electrostatic Discharge (ESD)  Holding voltage (V-h)  Secondary breakdown current (I-t2)   FSD Protection Design for the 45-V pLDMOS-SCR (p-n-p-Arranged) Devices with Source-Discrete Distributions 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Yen, Chih-Ying; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Electrostatic-discharge (ESD)  Holding voltage (V-h)  p-channel lateral-diffused MOSFET (pLDMOS)  Secondary breakdown-current (I-1/2)  Silicon controlled rectifier (SCR)  Trigger Voltage (V-t1)