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Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
journal of alloys and compounds, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan
收藏  |  浏览/下载：18/0  |  提交时间：2015/07/15
Laser diode  MOCVD  GaAs  InP  
Efficiency enhancement of InGaN/GaN multiple quantum wells 期刊论文
applied physics a-materials science & processing, 2015
作者:  Deng Z(邓震);  Jiang Y(江洋)
收藏  |  浏览/下载：10/0  |  提交时间：2016/05/31
Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 5
作者:  Wang, HJ (Wang Hai-Jiao);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Ma, LY (Ma Li-Ya);  Wen, L (Wen Lin)
收藏  |  浏览/下载：12/0  |  提交时间：2017/09/14
Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 119, 期号: 4, 页码: 1209
Deng, Z; Li, ZS; Jiang, Y; Ma, ZG; Fang, YT; Li, YF; Wang, WX; Jia, HQ; Chen, H
收藏  |  浏览/下载：16/0  |  提交时间：2016/12/26
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 5
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：17/0  |  提交时间：2015/12/31
Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 9
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：12/0  |  提交时间：2015/12/31
Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 3, 页码: 9
作者:  Zhang, F(张峰);  Ikeda, M;  Zhou, K(周堃);  Liu, ZS;  Liu, JP(刘建平)
收藏  |  浏览/下载：15/0  |  提交时间：2015/12/31
Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 416, 页码: 7
作者:  Zhou, K(周堃);  Liu, JP(刘建平);  Ikeda, M;  Zhang, SM(张书明);  Li, DY(李德尧)
收藏  |  浏览/下载：14/0  |  提交时间：2015/12/31
Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 8, 页码: 1
作者:  Zhang, F(张峰);  Ikeda, M;  Zhou, K(周堃);  Liu, ZS;  Liu, JP(刘建平)
收藏  |  浏览/下载：17/0  |  提交时间：2015/12/31
Modulating dual-wavelength multiple quantum wells in white light emitting diodes to suppress efficiency droop and improve color rendering index 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: [db:dc_citation_issue]
作者:  Zhao, Yukun;  Yun, Feng;  Wang, Shuai;  Zheng, Min;  Su, Xilin
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/02

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