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Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载:20/0  |  提交时间:2010/04/11
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载:85/0  |  提交时间:2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载:81/0  |  提交时间:2010/04/11
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z; Niu ZC; Fang ZD
收藏  |  浏览/下载:72/0  |  提交时间:2010/04/11
Recombination property of nitrogen-acceptor-bound states in ZnO 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101
Yang XD; Xu ZY; Sun Z; Sun BQ; Ding L; Wang FZ; Ye ZZ
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11


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