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The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载:85/0  |  提交时间:2010/04/11
Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582
Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载:41/0  |  提交时间:2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载:110/24  |  提交时间:2010/03/29
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载:81/0  |  提交时间:2010/04/11
Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282
作者:  Xu YQ;  Yang XH
收藏  |  浏览/下载:76/0  |  提交时间:2010/04/11


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